PART |
Description |
Maker |
1214-32L |
Pulsed Power L-Band (Si)
|
Microsemi
|
1214-550P |
Pulsed Power L-Band (Si)
|
Microsemi
|
1014-6A |
Pulsed Power L-Band (Si)
|
Microsemi
|
1214-220M |
Pulsed Power L-Band (Si)
|
Microsemi
|
1214-300V |
Pulsed Power L-Band (Si)
|
Microsemi
|
1214-370M |
Pulsed Power L-Band (Si)
|
Microsemi
|
2731-100M |
Pulsed Power S-Band (Si)
|
Microsemi
|
3134-65M |
Pulsed Power S-Band (Si)
|
Microsemi
|
RFHA1023 |
225W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
MAPG-S22729-350L00 MAPG-002729-350L00 |
S-Band 350 W Radar Pulsed Power GaN Pallet
|
M/A-COM Technology Solu...
|
MAPR-001011-850S00 |
L BAND, Si, NPN, RF POWER TRANSISTOR ROHS COMPLIANT, HERMETIC SEALED, CERAMIC PACKAGE-2 Avionics Pulsed Power Transistor 850W, 1025-1150 MHz, 10μs Pulse, 1% Duty Avionics Pulsed Power Transistor 850W, 1025-1150 MHz, 10楼矛s Pulse, 1% Duty
|
M/A-COM Technology Solutions, Inc.
|
HVV1214-075 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200レs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
|